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SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF176GU/D
The RF MOSFET Line
RF Power Field-Effect Transistors
N-Channel Enhancement-Mode
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. * Electrical Performance MRF176GU @ 50 V, 400 MHz ("U" Suffix) Output Power -- 150 Watts Power Gain -- 14 dB Typ Efficiency -- 50% Typ MRF176GV @ 50 V, 225 MHz ("V" Suffix) Output Power -- 200 Watts Power Gain -- 17 dB Typ Efficiency -- 55% Typ * 100% Ruggedness Tested At Rated Output Power * Low Thermal Resistance * Low Crss -- 7.0 pF Typ @ VDS = 50 V
MRF176GU MRF176GV
200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs
D
G G
S (FLANGE)
D
CASE 375-04, STYLE 2
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 125 40 16 400 2.27 -65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.44 Unit C/W
Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) Gate-Body Leakage Current (VGS = 20 V, VDS = 0) NOTE: 1. Each side of device measured separately.
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V(BR)DSS IDSS IGSS
125 -- --
-- -- --
-- 2.5 1.0
Vdc mAdc Adc
1
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 5.0 A) Forward Transconductance (VDS = 10 V, ID = 2.5 A) VGS(th) VDS(on) gfs 1.0 1.0 2.0 3.0 3.0 3.0 6.0 5.0 -- Vdc Vdc mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- -- 180 100 6.0 -- -- -- pF pF pF
FUNCTIONAL CHARACTERISTICS -- MRF176GV (2) (Figure 1)
Common Source Power Gain (VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency (VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness (VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA, VSWR 10:1 at all Phase Angles) NOTES: 1. Each side of device measured separately. 2. Measured in push-pull configuration. R1 BIAS 0-6 V C3 C4 C8 C9 C10 + 50 V Gps No Degradation in Output Power 15 50 17 55 -- -- dB %
R2 T1
D.U.T.
T2
C5 C1 C2 C6 C7
C1 -- Arco 404, 8.0-60 pF C2, C3, C6, C8 -- 1000 pF Chip C4, C9 -- 0.1 F Chip C5 -- 180 pF Chip C7 -- Arco 403, 3.0-35 pF C10 -- 0.47 F Chip, Kemet 1215 or Equivalent L1 -- 10 Turns AWG #16 Enameled Wire, L1 -- Close Wound, 1/4 I.D. Board material -- .062 fiberglass (G10), Two sided, 1 oz. copper, r ^ 5 Unless otherwise noted, all chip capacitors are ATC Type 100 or Equivalent
L2 -- Ferrite Beads of Suitable Material L2 -- for 1.5-2.0 H, Total Inductance R1 -- 100 Ohms, 1/2 W R2 -- 1.0 kOhms, 1/2 W T1 -- 4:1 Impedance Ratio RF Transformer. T1 -- Can Be Made of 25 Ohm Semirigid T1 -- Co-Ax, 47-62 Mils O.D. T2 -- 1:4 Impedance Ratio RF Transformer. T2 -- Can Be Made of 25 Ohm Semirigid T2 -- Co-Ax, 62-90 Mils O.D. NOTE: For stability, the input transformer T1 should be loaded NOTE: with ferrite toroids or beads to increase the common NOTE: mode inductance. For operation below 100 MHz. The NOTE: same is required for the output transformer.
Figure 1. 225 MHz Test Circuit
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
FUNCTIONAL CHARACTERISTICS -- MRF176GU (1) (Figure 2)
Common Source Power Gain (VDD = 50 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA) Drain Efficiency (VDD = 50 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA) Electrical Ruggedness (VDD = 50 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA, VSWR 10:1 at all Phase Angles) NOTE: 1. Measured in push-pull configuration. Gps No Degradation in Output Power 12 45 14 50 -- -- dB %
A BIAS C11 C12 L1 C1 B1 L2 C2 C3 C4 Z2 D.U.T. R3 A B1 -- Balun, 50 Semirigid Coax .086 OD 2 Long B2 -- Balun, 50 Semirigid Coax .141 OD 2 Long C1, C2, C9, C10 -- 270 pF ATC Chip Capacitor C3 -- 15 pF ATC Chip Cap C4, C8 -- 1.0-20 pF Piston Trimmer Cap C5 -- 27 pF ATC Chip Cap C6, C7 -- 22 pF Mini Unelco Capacitor C11, C13, C14, C15, C16 -- 0.01 F Ceramic Capacitor C12 -- 1.0 F 50 V Tantalum Cap C17, C18 -- 680 pF Feedthru Capacitor .200 C19 -- 10 F 100 V Tantalum Cap L1, L2 -- Hairpin Inductor #18 W L3, L4 -- Hairpin Inductor #18 W .200 C14 C16 R1
B
C17
L7
C18
L8 C19 50 V
C13
R2 Z1
C15 C9 Z3 C5 Z4 L6 B C6 C7 C8 C10 L4 L3
B2
.400
.200
L5, L6 -- 13T #18 W .250 ID L7 -- Ferroxcube VK-200 20/4B L8 -- 3T #18 W .340 ID R1 -- 1.0 k 1/4 W Resistor R2, R3 -- 10 k 1/4 W Resistor Z1, Z2 -- Microstrip Line .400L x .250W Z3, Z4 -- Microstrip Line .450L x .250W
Ckt Board Material -- .060 teflon-fiberglass, copper clad both sides, 2 oz. copper, r = 2.55
Figure 2. 400 MHz Test Circuit
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TYPICAL CHARACTERISTICS
4000 f T, UNITY GAIN FREQUENCY (MHz) VDS = 30 V 100 I D, DRAIN CURRENT (AMPS)
3000 15 V
2000
10
1000
TC = 25C
0
0
1
2
3 4 5 6 7 ID, DRAIN CURRENT (AMPS)
8
9
10
1
2
10 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
200
Figure 3. Common Source Unity Current Gain* Gain-Frequency versus Drain Current
* Data shown applies to each half of MRF176GU/GV
Figure 4. DC Safe Operating Area
INPUT AND OUTPUT IMPEDANCE MRF176GU/GV VDD = 50 V, IDQ = 2 x 100 mA Zin 300 225 400 150 100 225 300 225 50 30 Zo = 10 150 100 50 30 ZOL* f = 500 MHz ZOL* 400 f = 500 MHz f MHz 225 300 400 500 30 50 100 150 225 Zin OHMS (Pout = 150 W) 2.05 - j2.50 2.00 - j1.10 1.85 + j0.75 1.60 + j2.70 (Pout = 200 W) 7.50 - j6.50 5.50 - j7.00 3.20 - j6.00 2.50 - j4.80 2.05 - j2.50 17.00 - j4.00 14.00 - j5.00 11.00 - j5.20 8.20 - j5.00 5.00 - j4.20 6.50 - j3.50 4.80 - j3.10 3.00 - j1.90 2.60 + j0.10 ZOL* OHMS
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively.
Figure 5. Series Equivalent Input/Output Impedance
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TYPICAL CHARACTERISTICS
500 200 100 50 20 10 5 0 Crss Ciss POWER GAIN (dB) Coss VGS = 0 V f = 1 MHz 30 25 20 15 10 5 VDS = 50 V IDQ = 2 x 100 mA
C, CAPACITANCE (pF)
Pout = 200 W
150 W
20 30 40 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
50
5
10
20
50 100 f, FREQUENCY (MHz)
200
500
Figure 6. Capacitance versus Drain-Source Voltage*
* Data shown applies to each half of MRF176GU/GV
Figure 7. Power Gain versus Frequency
MRF176GV
300 Pout , POWER OUTPUT (WATTS) Pout , OUTPUT POWER (WATTS) VDD = 50 V 200 40 V 320 280 240 200 160 120 80 40 12 0 30 32 34 36 38 40 42 44 VDS, SUPPLY VOLTAGE (VOLTS) 46 48 50 IDQ = 2 x 100 mA f = 225 MHz Pin = 6 W 4W 2W
100 IDQ = 2 x 100 mA f = 225 MHz 0
0
6 Pin, POWER INPUT (WATTS)
Figure 8. Power Input versus Power Output
Figure 9. Output Power versus Supply Voltage
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TYPICAL CHARACTERISTICS MRF176GU
200 Pout , OUTPUT POWER (WATTS) 180 160 140 120 100 80 60 40 20 0 0 2 4 VDD = 40 V IDQ = 2 x 100 mA 6 8 10 12 Pin, INPUT POWER (WATTS) 14 16 500 MHz f = 400 MHz 200 Pout , OUTPUT POWER (WATTS) 180 160 140 120 100 80 60 40 20 0 0 2 4 VDD = 50 V IDQ = 2 x 100 mA 6 8 10 12 Pin, INPUT POWER (WATTS) 14 16 f = 400 MHz 500 MHz
Figure 10. Output Power versus Input Power
Figure 11. Output Power versus Input Power
200 Pout , OUTPUT POWER (WATTS) 180 160 140 120 100 80 60 40 20 0 20 IDQ = 2 x 100 mA f = 400 MHz 30 40 VDD, SUPPLY VOLTAGE (VOLTS) 50 Pin = 12 W 8W 4W
Figure 12. Output Power versus Supply Voltage
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NOTE: S-Parameter data represents measurements taken from one chip only.
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f MHz
420 410 400 390 380 370 360 350 340 330 320 310 300 290 280 270 260 250 240 230 220 210 200 190 180 170 160 150 140 130 120 100 110 90 80 70 60 50 40 30
0.978 0.977 0.976 0.976 0.976 0.975 0.975 0.974 0.973 0.973 0.971 0.970 0.969 0.968 0.967 0.965 0.963 0.960 0.958 0.956 0.955 0.953 0.950 0.945 0.940 0.934 0.928 0.924 0.920 0.915 0.909 0.902 0.890 0.875 0.858 0.846 0.842 0.846 0.851 0.804 |S11|
S11
Table 1. Common Source S-Parameters (VDS = 50 V, ID = 0.35 A)
-180
-180
-179
-179
-178
-178
-178
-177
-177
-176
-176
-176
-175
-175
-174
-174
-173
-173
-172
-172
-171
-171
-170
-169
-168
-167
-166
-163
-159
176 177 177 177 178 178 178 179 179 179 180
10.40
12.50
17.80
|S21|
0.39 0.40 0.42 0.44 0.47 0.50 0.55 0.58 0.61 0.61 0.65 0.68 0.72 0.78 0.87 0.96 1.01 1.05 1.08 1.14 1.22 1.36 1.56 1.78 1.96 2.10 2.24 2.41 2.61 2.92 3.41 4.04 4.61 5.36 6.13 7.28 8.45
S21
-1
10
10
13
18
21
22
21
21
20
22
24
30
35
38
38
38
39
41
46
53
59
63
65
67
70
77
87
11
11
11
4 4 4 1 1 3 7 8 8
0.015 0.010 0.012 0.013 0.013 0.010 0.008 0.008 0.009 0.009 0.008 0.006 0.005 0.005 0.005 0.006 0.005 0.004 0.004 0.004 0.005 0.006 0.007 0.008 0.007 0.008 0.009 0.010 0.012 0.013 0.014 0.015 0.016 0.017 0.017 0.018 0.018 0.018 0.011 0.011 |S12|
S12
-18
-23
-24
-21
-20
-24
-29
-31
-29
-22
-17
-15
-15
-16
-14
67 71 84 84 74 65 61 70 82 83 72 58 46 47 57 55 44 29 13 -8 -9 -1 6 7 2
1.038 1.015 0.940 0.979 1.045 1.086 1.135 1.095 1.053 0.980 0.940 0.926 0.964 1.030 1.150 1.160 1.120 1.010 0.940 0.940 0.900 0.940 1.030 1.120 1.130 1.046 0.951 0.858 0.816 0.819 0.857 0.919 0.916 0.883 0.786 0.708 0.652 0.610 0.606 0.602 |S22|
S22
-177 -175 -174 -174 -175 -175 -173 -174 -175 -173 -172 -169 -170 -171 -172 -172 -170 -169 -170 -167 -164 -165 -165 -165 -163 -164 -164 -162 -160 -157 -156 -158 -157 -158 -159 -157 -154 -149 -147 -149
Table 1. Common Source S-Parameters (VDS = 50 V, ID = 0.35 A) continued
f MHz 430 440 450 460 470 480 490 500 600 700 800 900 S11 |S11| |S21| 0.38 0.37 0.37 0.32 0.30 0.30 0.29 0.28 0.24 0.15 0.13 0.10 0.08 S21 3 0 |S12| S12 74 83 86 71 60 66 80 92 93 75 70 73 83 |S22| S22
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0.978 0.979 0.979 0.979 0.979 0.979 0.980 0.981 0.972 0.971 0.971 0.972 0.972 176 176 176 175 175 175 174 174 172 169 166 164 161 0.017 0.017 0.015 0.013 0.015 0.019 0.021 0.021 0.012 0.027 0.022 0.032 0.030 1.073 1.091 1.107 1.118 -178 -178 -177 -178 -178 -176 -178 -179 178 176 174 172 169 -2 -6 -5 -3 -1 0 1.003 0.975 0.963 0.993 0.943 0.999 0.977 0.972 0.999 -5 -8 -9 -5 -9 1000
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (Cgs). The PN junction formed during the fabrication of the MOSFET results in a junction capacitance from drain- to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications.
Cgd GATE DRAIN Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd
the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating (or any of the maximum ratings on the front page). Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of this device are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- This device does not have an internal monolithic zener diode from gate-to-source. The addition of an internal zener diode may result in detrimental effects on the reliability of a power MOSFET. If gate protection is required, an external zener diode is recommended.
Cds Cgs
SOURCE
The Ciss given in the electrical characteristics table was measured using method 2 above. It should be noted that Ciss, Coss, Crss are measured at zero drain current and are provided for general information about the device. They are not RF design parameters and no attempt should be made to use them as such. LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain, data presented in Figure 3 may give the designer additional information on the capabilities of this device. The graph represents
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HANDLING CONSIDERATIONS The gate of the MOSFET, which is electrically isolated from the rest of the die by a very thin layer of SiO2, may be damaged if the power MOSFET is handled or installed improperly. Exceeding the 40 V maximum gate-to-source voltage rating, VGS(max), can rupture the gate insulation and destroy the FET. RF Power MOSFETs are not nearly as susceptible as CMOS devices to damage due to static discharge because the input capacitances of power MOSFETs are much larger and absorb more energy before being charged to the gate breakdown voltage. However, once breakdown begins, there is enough energy stored in the gate-source capacitance to ensure the complete perforation of the gate oxide. To avoid the possibility of device failure caused by static discharge, precautions similar to those taken with small-signal MOSFET and CMOS devices apply to power MOSFETs. When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with grounded equipment. The gate of the power MOSFET could still be in danger after the device is placed in the intended circuit. If the gate may see voltage transients which exceed VGS(max), the circuit designer should place a 40 V zener across the gate and source terminals to clamp any potentially destructive spikes. Using a resistor to keep the gate-to-source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on.
DESIGN CONSIDERATIONS The MRF176G is a RF power N-channel enhancement mode field-effect transistor (FETs) designed for VHF and UHF power amplifier applications. M/A-COM RF MOSFETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V-groove MOS power FETs. M/A-COM Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation. DC BIAS The MRF176G is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF176G was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF176G may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems.
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PACKAGE DIMENSIONS
U G
1 2
Q
RADIUS 2 PL
0.25 (0.010)
M
TA
M
B
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K N Q R U STYLE 2: PIN 1. 2. 3. 4. 5. INCHES MIN MAX 1.330 1.350 0.370 0.410 0.190 0.230 0.215 0.235 0.050 0.070 0.430 0.440 0.102 0.112 0.004 0.006 0.185 0.215 0.845 0.875 0.060 0.070 0.390 0.410 1.100 BSC MILLIMETERS MIN MAX 33.79 34.29 9.40 10.41 4.83 5.84 5.47 5.96 1.27 1.77 10.92 11.18 2.59 2.84 0.11 0.15 4.83 5.33 21.46 22.23 1.52 1.78 9.91 10.41 27.94 BSC
R
5
-B- K
3 4
D N J
E H
-T- -A- C
SEATING PLANE
DRAIN DRAIN GATE GATE SOURCE
CASE 375-04 ISSUE D
Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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